The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Aug. 12, 1999
Satoshi Sekine, Sendai, JP;
Motorola, Inc., Schaumburg, IL (US);
Abstract
The objective is to accurately determine the effective value of channel width in accordance with the design value of channel width when the channel width is scaled down, thereby accurately modeling the electrical characteristic of a MOSFET. An error &Dgr;W,based on the length of the region extending from the field oxide film to the gate oxide film, an error &Dgr;W,based on the “effect of stress” that occurs when the design value W of channel width is scaled down, and an error &Dgr;W,based on the “effect of lithography” that occurs when the design value L of channel length is scaled down, are predetermined with respect to various values of W and L, and the effective value We of channel width is determined according to an equation: We=W−&Dgr;W,+&Dgr;W,+&Dgr;W,. The resulting effective value We is used to model the electrical characteristic of the device.