The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Sep. 09, 1999
Electrowatt Technology Innovation AG, Zug, CH;
Abstract
The photosensitive semiconductor element according to the invention comprises a substrate,, an intermediate layer,and an outer layer,, wherein the intermediate layer,is at least partially embedded within the substrate,and the outer layer,is at least partially embedded within the intermediate layer,and the intermediate layer,and the outer layer,form a photosensitive region,for the generation of a light-dependent signal R such as for example a photocurrent. In this arrangement the outer layer,is divided into mutually spaced regions,which are separated by intermediate regions,of the intermediate layer,. The spaced regions,of the outer layer then serve for example as the anode,of the photosensitive semiconductor element which can be connected to a suitable electronic evaluation arrangement. The spaced regions,prevent the formation of an inactive layer,which, by virtue of recombination phenomena in respect of charge carriers, results in a reduction in the photocurrent produced by the incident light.