The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Nov. 06, 1998
Masanobu Kato, Tokyo, JP;
Ryozo Furukawa, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
At a semiconductor photodetector,, a photodetection portion,is formed on a first substrate surface,of a substrate,. In addition, a recess,is formed at a second substrate surface,of the substrate,which faces opposite the first substrate surface,. This recessed portion,is formed as a wedge-type V-shaped groove with a forward mesa surface formed at a front surface thereof, and is formed approximately parallel to a side photodetection surface,of the substrate,which is approximately perpendicular to the second substrate surface,. A total reflection film is coated on the front surface of the recess,. In the semiconductor photodetector,structured as described above, an incoming light P,entering through the side photodetection surface,is reflected at the recess,to enter the photodetection portion,from the side where the substrate,is provided. As a result, the incoming light P,is sensed at the photodetection portion