The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Jun. 24, 1998
Applicant:
Inventors:
Zoran Krivokapic, Santa Clara, CA (US);
Ognjen Milic, Burlingame, CA (US);
Assignee:
Advanced Micro Devices, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/900 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/900 ; H01L 2/13205 ;
Abstract
A totally self-aligned transistor with a tungsten gate. A single mask is used to align the source, drain, gate and isolation areas. Overlay error is greatly reduced by the use of a single mask for these regions. A mid-gap electrode is also self-aligned to the transistor. The electrode is preferably formed from tungsten metal.