The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Sep. 25, 1996
Applicant:
Inventors:
Lindor E. Henrickson, San Jose, CA (US);
Sheldon Aronowitz, San Jose, CA (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/978 ;
U.S. Cl.
CPC ...
H01L 2/978 ;
Abstract
A MOSFET having a buried channel structure and an adjacent surface channel structure between a source region and a drain region. The surface channel structure is preferably formed adjacent the source region via angular implantation techniques. By combining the advantages of the surface channel device with the buried channel device, the resulting hybrid MOSFET structure has improved drive current and switching characteristics.