The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Oct. 21, 1998
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a semiconductor memory device with extremely less deterioration of characteristics of dielectric thin film and with high stability. A TaSiN barrier metal layer,is formed on a Pt upper electrode,This TaSiN barrier metal layer,has electrical conductivity and hydrogen-gas blocking property and besides has an amorphous structure stable in high temperature region without crystallizing even during firing for crystallization of an oxide ferroelectric thin film (SBT thin film),Then, hydrogen gas generated during later formation of a second interlayer insulating film,is reliably blocked from invading into the oxide ferroelectric thin film,by which characteristic deterioration of the oxide ferroelectric thin film,due to hydrogen gas is prevented.