The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Sep. 23, 1999
Syed B. Qadri, Fairfax Station, VA (US);
Earl F. Skelton, Washington, DC (US);
Alberto Pique, Bowie, MD (US);
James S. Horwitz, Fairfax, VA (US);
Douglas B. Chrisey, Bowie, MD (US);
Heungsoo Kim, Arlington, VA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
This invention pertains to a device of a substrate and a ZrO,-based semiconductor disposed thereon and a method for depositing the semiconductor on the substrate. The semiconductor is typically in the form of a film of 1-20 weight % ZrO,and 99-80 weight % In,O,or SnO,. The semiconductor is tunable in terms of optical transmission and electrical conductivity. Its transmission is in excess of about 80% over the wavelength range of 400-900 nm and its resistivity is from about 1.3×10,&OHgr;-cm to about 6.5×10,&OHgr;-cm. The deposition method is characterized by depositing in a chamber the semiconductor on a substrate by means of a physical vapor deposition whole maintaining a small oxygen pressure in the chamber.