The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Jun. 05, 2000
Jeffrey D. Rose, Austin, TX (US);
Michael J. Hartig, Austin, TX (US);
David G. Farber, Austin, TX (US);
Danny R. Babbitt, Austin, TX (US);
Jason A. Rivers, Austin, TX (US);
Ai Koh, Cedar Park, TX (US);
Terry G. Sparks, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A process for forming a semiconductor device includes placing a substrate (,) into an apparatus (,), creating a plasma, and processing the substrate (,). The apparatus (,) includes an electromagnetic source (,), a bulk material (,), and a first barrier layer (,). The bulk material (,) is between the electromagnetic source (,) and an interior (,) of the apparatus (,). The first barrier layer (,) is between the bulk material (,) and the interior (,). A process for operating an apparatus (,) includes forming a polymer layer along an inorganic layer (,or,), wherein the polymer layer is formed within the apparatus (,); removing the polymer layer to expose the inorganic layer (,, or,); and etching at least a portion of the exposed inorganic layer (,, or,). Typically, the inorganic layer (,, or,) is semiconductive or resistive.