The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Nov. 18, 1999
Applicant:
Inventors:
Jackson Ho, Palo Alto, CA (US);
Ronald T. Fulks, Mountain View, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/184 ;
Abstract
A top gate, self-aligned polysilicon (poly-Si) thin film transistor (TFT) is formed using a single laser anneal to crystallize the active silicon and to activate the source-drain region. The poly-Si TFT includes a substrate, dummy gate, a barrier oxide layer, a polysilicon pattern having a source region and a drain region, a gate oxide, and a gate.
Ho, Jackson. (2001). Top gate self-aligned polysilicon tft and a method for its production (U.S. Patent No. 6245602). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6245602
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile