The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
May. 27, 1998
Akira Kamisawa, Kyoto, JP;
Norifumi Fujimura, Izumi, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A ferroelectric material having a basic structure of ReMnO,, said ferroelectric material comprises Re and Mn one of which is contained in excess of the other to a limit of 20 at. % or the ferroelectric material is further added with a 4-valence element. Also, a method of forming a ferroelectric material, comprises decreasing an oxygen partial pressure within a growth reactor such as a vacuum deposition reactor, and forming a film on a film-forming surface of a substrate (,) while blowing an oxidizing source thereto. This structure provides a ferroelectric material low in leak current and improved in ferroelectric characteristics. Where using the material for a semiconductor memory device, its characteristics can be improved.