The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Sep. 03, 1999
Applicant:
Inventors:
Masataka Hourai, Ogi-gun, JP;
Eiji Kajita, Ogi-gun, JP;
Assignee:
Sumitomo Sitix Corporation, Amagasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/504 ;
U.S. Cl.
CPC ...
B32B 1/504 ;
Abstract
A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (° C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.