The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Jun. 22, 1999
Applicant:
Inventor:
James D. Sansbury, Portola Valley, CA (US);
Assignee:
Altera Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/500 ;
U.S. Cl.
CPC ...
G11C 1/500 ;
Abstract
A nonvolatile memory cell (,) has a read device (,), program device (,), and tunnel diode (,). A write control line (WC) is directly coupled to the tunnel diode (,). The memory cell (,) may be used to form compact arrays of memory cells to store logical data. During programming of a selected memory cell, half-select voltages are used on the write control (WC) and control gate lines (CG) for unselected memory cells to prevent disturb and minimize oxide stress.