The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Nov. 12, 1999
Yoshitaka Shinomiya, Tokyo, JP;
Mobile Communications Tokyo Inc., Tokyo, JP;
Abstract
A semiconductor device for high-frequency power amplification includes a pair of first and second composite transistors each comprised of parallel-connected transistor cells each having parallel-connected transistor elements. The number of the transistor cells is selected to satisfy a requirement on the power capacity of the device. The two composite transistors form a power amplifier circuit for balanced-inputting and performing power amplification of a high-frequency signal. The transistor cells of the composite transistors are alternately formed on a semiconductor substrate on which electrode wiring patterns extending in the transistor-cell arraying direction are formed. Respective electrodes of transistor elements are collectively connected, composite-transistor by composite-transistor, to these patterns.