The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2001

Filed:

Aug. 30, 1999
Applicant:
Inventors:

Ting Y. Tsui, Palo Alto, CA (US);

Reading Maley, San Francisco, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract

There is provided a new polysilicon fuse structure for implementation within integrated circuit devices so as to permit programming of the same. The polysilicon fuse structure includes a first electrical contact region, a second electrical contact region, and multiple fuse regions interconnected between the first electrical contact region and the second electrical contact region. The multiple fuse regions are formed of a plurality of strips, each being of a different width and/or length, which are disposed in a spaced-apart relationship so as to form a small opening between adjacent strips. A number of the plurality of strips is selectively blown when a predetermined amount of current is passed from one of the first and second electrical contact regions through the plurality of strips to the other one of the first and second electrical contact regions so to limit the current passing to an integrated circuit device connected thereto during normal operating conditions.


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