The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2001

Filed:

Sep. 22, 1998
Applicant:
Inventors:

Patricia McGuinness Marmillion, Colchester, VT (US);

Anthony Michael Palagonia, Underhill, VT (US);

Bernadette Ann Pierson, South Hero, VT (US);

Dennis Arthur Schmidt, South Burlington, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/701 ;
Abstract

In a silicon on insulator technology, cooling channels in a support substrate are located substantially under the junction regions of selected individual active devices in a semiconductor layer, where the junction regions are separated from the substrate by an insulating layer. In a second embodiment, thermal conductors in a support substrate are located substantially under the junction regions of selected individual active devices in a semiconductor layer where the junction regions are separated from the substrate by an insulating layer. Optionally, either the cooling channels or the thermal conductors may be enlarged such that a plurality of devices may be cooled by a single cooling channel or thermal conductor.


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