The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2001

Filed:

Sep. 30, 1998
Applicant:
Inventor:

Jack F. Thomas, Palo Alto, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/9788 ; H01L 2/976 ;
Abstract

Non-volatile memory semiconductor device manufacturing throughput is increased by simultaneously patterning the floating gate layer and dielectric layer formed thereon. Embodiments include forming sidewall dielectric layers joined with one of the isolation insulating regions to enhance insulation of the floating gate electrode.


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