The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Sep. 30, 1998
Applicant:
Inventor:
Jeff Levy, Moshav Netofah, IL;
Assignee:
Tower Semiconductor Ltd., Migdal Haemek, IL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract
A batch process for the high-pressure forming of metal plugs in the dielectric layers of semiconductor wafers. After holes are etched in the dielectric layer of each wafer, and a layer of a metal such as aluminum deposited over the dielectric, both the etching and the deposition being done in vacuum chamber cluster machines, the wafers are removed from the cluster machines and placed together in a high pressure chamber where they are subjected to high isostatic pressure that forces the metal into the holes.