The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2001

Filed:

Dec. 02, 1999
Applicant:
Inventors:

Jung-Rae Ro, Taejon, KR;

Sung-Bock Kim, Taejon, KR;

Kyoung-Wan Park, Taejon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1203 ;
U.S. Cl.
CPC ...
H01L 2/1203 ;
Abstract

A method for fabricating a compound semiconductor substrate having a quantum dot array structure includes the steps of forming a plurality of dielectric thin layer patterns on a substrate, thereby forming an exposed area of the substrate, sequentially forming buffer layers and barrier layers in a pyramid shape on the exposed area of the substrate, forming Ga droplets on the barrier layers, transforming the Ga droplets into GaAs quantum dots, performing a thermal process to the substrate, and growing the buffer layers and the barrier layers to thereby form a passivation layer capping the GaAs quantum dots.


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