The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Jan. 14, 2000
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A micro inertia sensor fabrication method in which thick silicon bonded to glass is processed at a high sectional ratio, is provided. In this method, silicon is bonded to a glass substrate, the bonded silicon is polished to have a desired thickness, a silicon structure is formed by etching the polished silicon using an RIE method, and the silicon structure is separated from the bottom by selectively etching glass below the silicon structure via grooves in etched silicon. Since the thick silicon bonded to glass is processed at a high sectional ratio, the area and thickness of the silicon to be measured are increased. Also, this method is simple since only one mask is used.