The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Aug. 21, 1998
Electronics and Telecommunications Research Institute, Daejon-Shi, KR;
Abstract
A method for manufacturing quantum wires is provided in which a stacked structure having AlAs layers and GaAs layers alternatively is formed, V-grooves are formed beside the GaAs layers and the quantum wires are formed using the V-grooves. The method for manufacturing quantum wires, which method includes the following steps: growing a GaAs buffer layer on the facet (,) of a GaAs single crystal substrate; growing an AlAs layer for using as oxide mask and a GaAs layer for a V-groove alternatively on the GaAs buffer layer so that each GaAs layer is stacked between an AlAs layer and an adjacent AlAs layer; growing the cover layer of GaAs on the AlAs layer which is grown as the top layer of the structure; cutting the entire structure including the GaAs cover layer to the perpendicular direction of (,), whose structure is grown in the orientation of (,) entirely, so as to expose the facet (,); performing a heat treatment for the entire structure cut to expose the facet (,) and forming oxide film on the exposed portion of each AlAs layer; etching each exposed GaAs layer chemically using the oxide as mask and forming V-groove so that the facet (,) of GaAs layer is exposed; and growing the quantum wire in the V-groove.