The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Aug. 07, 1998
Applicant:
Inventors:
Klaus Alexander Anselm, New Providence, NJ (US);
James Nelson Baillargeon, Springfield, NJ (US);
Alfred Yi Cho, Summit, NJ (US);
Assignee:
Agere Systems Optoelectronics Guardian Corp., Miami Lakes, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/323 ;
U.S. Cl.
CPC ...
H01S 5/323 ;
Abstract
An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with T,as high as 82 K.