The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Feb. 23, 2000
Mikio Mukai, Kanagawa, JP;
Yutaka Hayashi, Ibaraki, JP;
Sony Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor memory cell which requires no refreshing operation for retaining information. The semiconductor memory cell comprises a first transistor TR,having a first conductivity type, a second transistor TR,having a second conductivity type and a MIS type diode DT for retaining information, wherein one source/drain region of the first transistor TR,corresponds to the channel forming region CH,of the second transistor TR,, one source/drain region of the second transistor TR,corresponds to the channel forming region CH,of the first transistor TR,, one end of the MIS type diode DT is formed of an extending portion of the channel forming region CH,of the first transistor TR,, and the other end of the MIS type diode DT is constituted of an electrode which is formed of an electrically conductive material and connected to a third line having a predetermined potential.