The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Oct. 07, 1998
Applicant:
Inventor:
F. Scott Johnson, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ;
U.S. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ;
Abstract
An emitter contact structure, and associated method, for a bipolar junction transistor. The emitter contact structure includes a collector region, an intrinsic base region within the collector region, an extrinsic base region within the collector region, a base link-up region within the collector region between the intrinsic base region and the extrinsic base region, a base link diffusion source layer above the base link-up region, a capping layer above the base link diffusion source layer, and a base electrode laterally engaging the extrinsic base region.