The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2001

Filed:

Sep. 25, 1998
Applicant:
Inventors:

Wataru Shinohara, Katano, JP;

Hisaki Tarui, Shijyounawate, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/100 ; H01L 2/904 ; H01L 3/120 ; H01L 3/1036 ; H01L 3/10376 ;
U.S. Cl.
CPC ...
H01L 3/100 ; H01L 2/904 ; H01L 3/120 ; H01L 3/1036 ; H01L 3/10376 ;
Abstract

The present invention is to prevent a back metal electrode film from being insufficiently processed even if an amorphous silicon related material film is thinned, wherein a transparent conductive film,, an amorphous silicon related material film,, and a back metal electrode film,are formed in this order on one main surface of a light transmissive insulation substrate,, a brittle film,having higher hardness than that of the back metal electrode film,in at least a fused state is provided on the back metal electrode film,and an energy beam is irradiated from the other main surface of the light transmissive insulation substrate,, to remove the amorphous silicon related material film,, the back metal electrode film,, and the brittle film


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