The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Jan. 07, 1999
Applicant:
Inventors:
Masanobu Tsuchitani, Fuchu, JP;
Keita Suzuki, Nishinomiya, JP;
Akihiko Osawa, Kawasaki, JP;
Yoshiro Baba, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9792 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 2/9792 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
Abstract
A semiconductor device, which can have a uniform film on open ends of trenches by using materials having a different oxidation rate, and a fabrication method thereof are provided. The semiconductor device having trenches configured to have open ends covered with an oxidation film made of a material having an oxidation rate faster than that of a semiconductor substrate and a fabrication method thereof are provided.