The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Jul. 23, 1998
Keisaku Nakao, Kyoto, JP;
Akihiro Matsuda, Osaka, JP;
Yasufumi Izutsu, Kyoto, JP;
Toyoji Ito, Shiga, JP;
Takumi Mikawa, Kyoto, JP;
Toru Nasu, Kyoto, JP;
Yoshihisa Nagano, Osaka, JP;
Keisuke Tanaka, Shiga, JP;
Toshie Kutsunai, Osaka, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.