The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
May. 10, 1999
Applicant:
Inventors:
Richard W. Glew, Lehigh, PA (US);
Judith A. Grenko, Reading, PA (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract
A semiconductor device including first and second epitaxial layers grown in a selective area growth region on a substrate includes an active layer or well layer comprising a first composition formed using a trimethylgallium precursor material and a barrier layer comprising a second composition formed using a triethylgallium precursor material. The use of the first and second compositions in the well layer and barrier layer respectively maximizes the strain in the well layer while simultaneously minimizing the net strain of the selective area growth region.