The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Dec. 09, 1998
Kenro Nakamura, Kamakura, JP;
Hiroyuki Yano, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A silicon nitride film is formed on a base layer having a silicon oxide film and a trench, in such a manner that the trench of the base layer is filled with the silicon nitride film. Subsequently, the silicon nitride film is selectively polished with reference to the silicon oxide film, with the silicon oxide film used as a stopper. The silicon nitride film is polished in a chemical mechanical polishing process that uses slurry containing a phosphoric acid and silica whose particle diameter is less than 10 nm, or slurry containing a phosphoric acid derivative and silica whose particle diameter is less than 10 nm. As a result of this selective polishing, the silicon nitride film selectively remains inside the trench.