The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Jan. 14, 1999
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A ferroelectric capacitor electrode contact structure comprising an insulator (,) placed over a substrate (,) and containing a transistor source (,) and transistor drain (,) between the substrate (,) and the insulator (,). The insulator (,) contains a source plug (,) and a conductive drain plug (,). The transistor source (,) is electrically connected to the source plug (,). The transistor drain (,) is electrically connected to the conductive drain plug (,). A transistor gate (,) is between the source plug (,) and a conductive drain plug (,) and is contained by the insulator (,). Metal wiring (,) is electrically connected to the source plug (,). A barrier film (,) is placed over the insulator (,) and the conductive drain plug (,). The bottom electrode (,) is placed over the barrier film (,). The ferroelectric layer (,) is placed over the bottom electrode (,). The top electrode (,) is placed over the ferroelectric layer (,).