The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jan. 28, 2000
Joseph Pernyeszi, Scotts Valley, CA (US);
General Electronics Applications, Inc., Scotts Valley, CA (US);
Abstract
A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed on a semiconductor substrate including an isolation diffusion region around the semiconductor device, a substrate layer, an epi layer on top of the substrate layer, a surface diffusion region extending into the epi layer from a top surface of the epi layer and a metallization line coupled to the surface diffusion, wherein the metallization line traverses the semiconductor device and the isolation diffusion region. The semiconductor device also includes a poly field plate over the isolation diffusion region and beneath the metallization line, a field limiting diffusion region provided in the epi layer between the surface diffusion region and the isolation diffusion region and below the metallization line, and a contact coupled to the field limiting diffusion region, wherein the contact extends to a region below the metallization line and overlapping the poly field plate.