The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Sep. 11, 1998
Applicant:
Inventor:
Yohei Hiura, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
According to the present invention, a gate electrode having a polymetal structure, that is, a lamination structure of a polysilicon film formed via a gate insulating film on a semiconductor substrate, and a refractory metal film. An electroconductive side wall made of tungsten silicide or the like is formed on a side surface of the refractory metal film which constitutes the gate electrode. The side wall serves to prevent the evaporation of the refractory metal film.
Hiura, Yohei. (2001). Semiconductor device including gate electrode having polymetal structure and method of manufacturing of the same (U.S. Patent No. 6236093). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6236093
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile