The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
May. 05, 1999
Masahiko Fujisawa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A main electrode (,) is connected to an n-type semiconductor layer (,) selectively formed on a major surface of a silicon substrate. A silicide layer (,) is interposed between the main electrode (,) and the semiconductor layer (,). The silicide layer (,) is heat-treated at 600° C. to 850° C. for at least 30 minutes, to have an epitaxial layer selectively epitaxially growing in a specific direction such as the <,> direction toward the semiconductor layer (,). Therefore, irregularities are formed on the interface between the silicide layer (,) and the semiconductor layer (,). The interface resistivity between the silicide layer (,) and the semiconductor layer (,) is low due to the presence of the epitaxial layer, and besides the contact area of the interface is large due to the irregularities of the interface. Consequently, the contact resistance between the main electrode (,) and the semiconductor layer (,) is effectively reduced. Thus, the contact resistance between the main electrode (,) and the semiconductor substrate is reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile