The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Dec. 02, 1998
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor light emitting device is disclosed. An emitting layer forming portion for forming an emitting layer made of a compound semiconductor of AlGaInP group or AlGaAs group including a n-type layer, an active layer and a p-type layer laid one on another is formed on a GaAs substrate. Further, a current diffusion layer of GaP is formed on the front surface of the emitting layer forming portion. The p-type layer between the active layer and the current diffusion layer is formed to the thickness of not less than about 2 &mgr;m, or the current diffusion layer is formed to the thickness of about 3 to 7 &mgr;m. As a result, the semiconductor light emitting device of a high luminance is thus realized, in which the distortion due to the lattice mismatch has no effect on the emitting layer.