The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Aug. 25, 1999
Nobuyuki Takenaka, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A process for producing a semiconductor device comprising the steps of: forming a first insulating film on an underlayer having an electrically conductive layer; forming a first opening in the first insulating film to expose at least part of the electrically conductive layer; forming on the first insulating film a second insulating film which is more susceptible to etching than the first insulating film while filling the first opening with the second insulating film; forming a mask having an opening at least as large as the first opening in a region on the second insulating film which region corresponds to the first opening; removing at least the second insulating film filling the first opening with use of the mask thereby to form a second opening; depositing a material for forming a wiring layer entirely on a surface so as to fill the first opening and the second opening with the material, thereby to form in the first opening and the second opening a wiring layer which electrically connects to the electrically conductive layer; and removing the material for forming the wiring layer deposited on an upper surface of the second opening and on the second insulating film, by polishing.