The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jun. 06, 2000
Hiroji Kawai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric conductivity by ion implantation. After a nitride III-V compound semiconductor layer having an electric conductivity is grown, a high resistance region is formed in the nitride III-V compound semiconductor layer by locally implanting boron ions therein. The amount of implanted boron is preferably not less than {fraction (1/30)}, or more preferably not less than {fraction (1/15)}, of the carrier concentration of the nitride III-V compound semiconductor layer. The high-resistance region is used as a device isolating region of an electron moving device or as a current blocking layer of a semiconductor laser.