The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Dec. 28, 1998
Applicant:
Inventors:
Maria Concetta Nicotra, Catania, IT;
Antonello Santangelo, Belpasso, IT;
Daniela Anna Masciarelli, Acireale, IT;
Assignee:
STMicroelectronics S.R.L., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A process for selectively introducing a dopant into the bottom of a trench formed in a semiconductor material layer includes depositing a barrier layer by a process of deposition over the semiconductor material layer to form a deposited barrier layer. The deposited barrier layer has, over lateral walls and a bottom wall of the trench, a thickness which is lower than a nominal thickness of the deposited barrier layer over a planar surface of the semiconductor material layer. The method also including implanting a dopant using the deposited barrier layer as an implant mask.