The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jul. 12, 1999
Bradley M. Melnick, Austin, TX (US);
Hideo Oi, Sendai, JP;
Bruce E. White, Jr., Round Rock, TX (US);
Robert Edwin Jones, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A first etch stop layer (,) is formed over a semiconductor substrate (,). A first dielectric layer (,) is formed over the first etch stop layer (,). An opening (,) is formed in the first dielectric layer (,). The opening (,) extends through the first dielectric layer (,) and exposes a first conductive material (,) under the first dielectric layer (,). A second conductive material (,) is deposited over the semiconductor substrate (,) and within the opening (,). The second conductive material (,) electrically contacts the first conductive material (,). Portions of the second conductive material (,) lying outside of the opening (,) are removed and then portions of the first dielectric layer (,) are removed to expose portions of the first etch stop layer (,).