The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jul. 01, 1998
Men-Chee Chen, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The invention comprises a floating gate memory structure, a method for making a floating gate memory structure, and a method for forming a continuous source line in a floating gate memory structure. One aspect of the invention is a method for forming a continuous source line. A plurality of trenches and moats are formed in a semiconductor structure wherein the moats are adjacent to the trenches. A portion of each moat forms the source region of a transistor. A silicate glass layer is deposited outwardly from a semiconductor structure to form an intermediate structure. The silicate glass layer contains an n-type dopant. The intermediate structure is heated for a first period of time to dope the plurality of trenches. Portions of the doped plurality of trenches form a part of at least one continuous source line.