The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jun. 17, 1999
Applicant:
Inventors:
Masato Kunitomo, Ome, JP;
Shinpei Iijima, Akishima, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A semiconductor device includes a DRAM having a memory cell constructed by an information storage capacitor C which is comprised of a lower electrode,made of a ruthenium film and an upper electrode,made of a capacity insulating film,and a titanium nitride film and which is connected in series with a memory cell selection MISFET Qs formed on the main surface of a semiconductor substrate,. The capacity insulating film,is made of a multi layered film comprising two layered crystallized tantalum oxide films,and,each having a film thickness of 10 nm or less. The film thickness of the capacity insulating film,is set to 10 to 40 nm.