The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jan. 19, 1999
Arto V Nurmikko, Providence, RI (US);
Yoon-Kyu Song, Seoul, KR;
Brown University Research Foundation, Providence, RI (US);
Abstract
A vertical cavity, surface emitting laser (VCSEL) device (,′) has a substrate (,) and, disposed over a surface of the substrate, a Group III nitride buffer layer (,) and a mesa structure containing at least a portion of an n-type Group III nitride layer (,). The VCSEL device and mesa structure further include a first multilayer dielectric mirror stack (,), that is embedded within the first Group III nitride layer by the use of a lateral edge overgrowth (LEO) process; a p-type Group III nitride layer (,); and a p-n junction between the n-type Group III nitride layer and the p-type Group III nitride layer. The p-n junction contains an active multiquantum well region (,). Also contained in the mesa structure is a dielectric (silicon dioxide) layer (,) having a current constricting aperture (,). The dielectric layer and aperture are buried within one of the n-type Group III nitride layer or the p-type Group III nitride layer, also by the use of the LEO process. A second multilayer dielectric mirror stack (,) is disposed on top of the mesa structure and over the p-type Group III nitride layer. The first and second multilayer dielectric mirror stacks define a resonant optical cavity structure that passes through the aperture, and that supports an emission of less than 500 nm in the blue/green or NUV spectral regions.