The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2001

Filed:

Aug. 03, 1999
Applicant:
Inventors:

Gregory J. Smith, Tucson, AZ (US);

Yinming Chen, Tucson, AZ (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 ;
U.S. Cl.
CPC ...
G05F 1/10 ;
Abstract

A bandgap-based reference voltage generator circuit with an increased output reference voltage and a reduced temperature coefficient uses a curvature correction bias voltage to significantly reduce the degree of variation of the bandgap-based reference voltage over temperature. A current having a negative temperature coefficient is conducted by a resistor having a positive temperature coefficient. The resultant voltage across the resistor has an arcuate voltage-versus-temperature characteristic with a direction of incurvature that is substantially opposite the direction of incurvature of the corresponding arcuate voltage-versus-temperature characteristic of the voltage generated by a conventional bandgap reference voltage generator circuit. These voltages are summed together to produce a bandgap-based reference voltage which is greater in magnitude than a conventional bandgap reference voltage and has a significantly reduced temperature coefficient.


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