The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Nov. 25, 1998
Applicant:
Inventor:
Hisamitsu Suzuki, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7102 ;
U.S. Cl.
CPC ...
H01L 2/7102 ;
Abstract
In a BiCMOS structure, a bipolar transistor is formed inside a the ring of a ring-shaped structure that is made of the same material as the gate electrode, and an insulation film that provides insulation between an emitter electrode and a p-type intrinsic base region is used only inside the ring-shaped structure, so that the insulation film that makes up the side wall insulation film of the CMOS transistor and the insulation film that provides insulation between the bipolar transistor emitter electrode and p-type intrinsic base region are different films.