The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jul. 12, 1999
Mehran Matloubian, Encino, CA (US);
Daniel Docter, Santa Monica, CA (US);
Miroslav Micovic, Newbury Park, CA (US);
Hughes Electronics Corporation, El Segundo, CA (US);
Abstract
A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InP,Sb,, wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×10,cm/s.