The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jan. 29, 1999
Chia-Ching Tung, Kaohsiung, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A method for forming a capacitor on a substrate is disclosed herein. The method according to the present invention can increase the capacitance of a capacitor in one interface-etching process, the method mention above includes the following step. The first step is to form a storage node in a dielectric layer on the substrate, wherein the bottom of a cubic portion of the storage node faces the substrate is buried in the dielectric layer, and the storage node is coupled to the substrate. Next, interface-etching the dielectric layer to expose the surface including the bottom of the cubic portion of the storage node. In etching the dielectric layer made of BPSG, the buffer oxide etching (B.O.E) is utilized. Then an insulating layer is formed on the exposed surface including the bottom of the cubic portion of the storage node. Finally, a conductive layer is formed on the insulating layer. The storage node, the insulating layer, and the conductive layer constitute the capacitor.