The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jun. 03, 1998
Nigel Graeme Cave, Austin, TX (US);
Matthew Thomas Herrick, Austin, TX (US);
Terry Grant Sparks, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
In one embodiment, a first dielectric film (,), and a second dielectric film (,) are formed over a substrate (,). The substrate is cured to at least partially change a property of the second dielectric film thereby forming an intermediate etch stop (,). A third dielectric film (,) is formed over the substrate (,). The substrate (,) is then etched to remove portions of the first dielectric film (,) and portions of the third dielectric film (,) using the intermediate etch stop (,) to form a portion of an interconnect opening (,). In an alternative embodiment, a resist layer (,), and portions of an interlevel dielectric layer (,) are etched. Upon completion of the step of etching, the photoresist layer (,) and portions of the interlevel dielectric layer (,) are completely removed.