The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Nov. 06, 1998
Applicant:
Inventors:
David Wu, San Jose, CA (US);
Dong-Hyuk Ju, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/13205 ;
Abstract
A semiconductor device is provided with a gate electrode having a substantially rectangular profile by depositing a layer of amorphous or microcrystalline silicon. The amorphous or microcrystalline silicon is doped with impurities, before patterning to form the gate electrode, to reduce gate depletion. The doped gate electrode layer is then patterned to form a gate electrode having a substantially rectangular profile.