The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Dec. 10, 1998
Applicant:
Inventors:
Tiao-Yuan Huang, Hsinchu, TW;
Horng-Chih Lin, Hsinchu, TW;
Assignee:
National Science Council, , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1425 ; H01L 2/1469 ;
Abstract
A method is provided for selective oxidation on source/drain regions of transistors on an integrated circuit. The method includes the steps of a) incorporating a neutral species into first kind of the source/drain regions, and b) forming oxidation regions over the first kind of source/drain regions and second kind of the source/drain regions, wherein the oxidation regions over the second kind are thicker than the oxidation regions over the first kind.