The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2001

Filed:

Sep. 08, 1999
Applicant:
Inventors:

Kazuhiro Hanazawa, Chiba, JP;

Masamichi Abe, Chiba, JP;

Hiroyuki Baba, Chiba, JP;

Naomichi Nakamura, Chiba, JP;

Noriyoshi Yuge, Chiba, JP;

Yasuhiko Sakaguchi, Chiba, JP;

Yoshiei Kato, Chiba, JP;

Fukuo Aratani, Chiba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 3/3037 ;
U.S. Cl.
CPC ...
C01B 3/3037 ;
Abstract

Process and apparatus for refining silicon by treatment in a graphite vessel with irradiation with an electron beam while removing impurity elements by evaporation. A single graphite vessel is used, or plural graphite vessels are arranged in sequence. During treatment in successive graphite vessels, molten silicon is poured in succession from one vessel to another. Use of graphite vessels improves heat efficiency, prevents contamination and produces refined silicon containing very low contents of impurities.


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