The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Oct. 19, 1998
Yet-Ming Chiang, Framingham, MA (US);
Gregory W. Farrey, Somerville, MA (US);
Nesbitt W. Hagood, IV, Wellesley, MA (US);
Andrey Soukhojak, Somerville, MA (US);
Haifeng Wang, Somerville, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A single crystal perovskite material is provided having the formula, M,Bi,M′,M″,O,, where M is one or more of Na, K, Rb and Cs; M′ is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M″ is one or more of Ti, Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta and W; where z≦0.1; 0.9≦&dgr;≦1.1; &agr;, &bgr; and &ggr; are greater than zero; and (&agr;+&bgr;+&ggr;) is in the range of about 0.75 to 1.1. A perovskite material of the formula, Na,M,Bi,M′,M″,O,, is provided where M is one or more of K, Rb and Cs; M′ is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; M″ is one or more of Ti, Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta and W; where z≦0.1; 0.9≦&dgr;≦1.1; &agr;, &bgr; and &ggr; are greater than zero; and (&agr;+&bgr;+&ggr;) is in the range of about 0.75 to 1.1. The materials exhibit improved d,and piezoelectric strain values, as well as low hysteresis.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile