The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2001

Filed:

Sep. 02, 1999
Applicant:
Inventors:

Dennis R. Hollars, San Jose, CA (US);

Robert B. Zubeck, Los Altos, CA (US);

Assignee:

SciVac, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23L 1/434 ;
U.S. Cl.
CPC ...
C23L 1/434 ;
Abstract

A cylindrical carriage sputtering system for disk, wafer, and flat panel substrates (,) comprising a cylindrical shaped vacuum sealed passageway formed by two concentric inner (,) and outer hollow cylinders (,), along with a top and a bottom sealing flange (,). A central hollow cylinder (,), disposed between the inner (,) and outer cylinder (,), includes substrate-carrying openings and serves as a cylindrical carriage which substantially fills the sealed passageway and is rotatable in predetermined steps. Novel substrate processing devices (,) for deposition, heating, and cooling are attached around the circumference of the inner and outer cylindrical walls. Vacuum pumps are located between substrate processing devices (,). The openings in the cylindrical carriage are each fitted with thermally isolated substrate holders (,) for supporting a multiplicity of substrates (,). Unique entrance and exit vacuum load-locks with integrated robotic means are provided for transferring disk substrates (,) into and out of the system. The sputtering system is designed to allow the processing of substrates (,) at temperatures of up to about 1000° C. on either stationary or pass-through sputtering modes.


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